to-251s plastic-encapsulate mosfets CJD04N60B 600v n-channel power mosfet general description this advanced high voltage mosfet is designed to wighstand high energy in the avalanche mode and switch efficiently.this new high energy device also offers a drain-to-source diode wigh fast recovery time.desighed for high voltage,high speed switchi ng applications such as power supplies,converters,power motor controls and bridge circuits. feature z high current rating z lower r ds(on) z lower capacitance z lower total gate charge z tighter v sd specifications z avalanche energy specified maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 600 v gate-source voltage v gs 30 continuous drain current i d 4.0 a pulsed drain current i dm 16 single pulsed avalanche energy (note1) e as 260 mj thermal resistance from junction to ambient r ja 100 /w junction temperature t j 150 storage temperature range t stg -55 ~+150 maximum lead temperure for soldering purposes , 1/8?from case for 5 seconds t l 260 to-251s 1. gate 2. drain 3. source 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit off characteristics drain-source breakdown voltage v (br)dss v gs = 0v, i d =250a 600 v zero gate voltage drain current i dss v ds =600v, v gs =0v 25 a v ds =0.8xratedv (br)dss ,v gs =0v, t j =125 100 gate-body leakage current i gss v ds =0v, v gs = 30v 100 na on characteristics (note2) gate-threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds(on) v gs =10v, i d =2.0a 2.3 3.0 ? forward transconductance g fs v ds =50v, i d =2.0a 2.5 s dynamic characteristics (note 3) input capacitance c iss v ds =25v,v gs =0v,f =1mhz 760 pf output capacitance c oss 180 reverse transfer capacitance c rss 20 switching characteristics (note 2,3) turn-on delay time t d (on) v dd =300v, v gs =10v, r g =9.1 ? , i d =4.0a 20 ns turn-on rise time t r 10 turn-off delay time t d(off) 40 turn-off fall time t f 20 total gate charge q g v ds =480v ,v gs =10v,i d =4.0a, 5.0 10 nc gate to source charge q gs 2.7 gate to drain ?miller? charge q gd 2.0 drain-source diode characteristics drain-source diode forward voltage(note2) v sd v gs = 0v, i s =4.0a 1.5 v continuous drain-source diode forward current(note4) i s 10 a pulsed drain-source diode forward current i sm 40 a notes : 1. l=30mh,i l =4a, v dd =100v,v gs =10v, r g =25 ? ,starting t j =25 . 2. pulse test : pulse width 300s, duty cycle 2%. 3. guaranteed by design, not subject to production 4. surface mounted on fr4 board, t 10s 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
01234567 0.0 0.2 0.4 0.6 0.8 1.0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.01 0.1 1 345678910 0 1 2 3 4 5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds =10v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 4 0.1 pulsed source current i s (a) source to drain voltage v sd (v) v sd i s ?? t a =100 t a =25 pulsed i d =2a r ds(on) ?? v gs on-resistance r ds(on) ( ) gate to source voltage v gs (v) t a =100 t a =25 t a =25 pulsed on-resistance r ds(on) ( ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs =8v v gs =5.5v pulsed CJD04N60B output characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 10v v gs =5v v gs =4.5v 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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